STH6N100 Подобна

STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH6N100 Datasheet и Spec

Производител : ST Microelectronics

Опаковка :

Pins : 0

Температурата : Мин 0 °C | Макс 0 °C

Размер : 222 KB

Заявление : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS