Path:OKDatasheet > Полупроводникови Datasheet > ST Microelectronics Datasheet > MJD112
MJD112 спец.: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112 Подобна
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD112 Datasheet и Spec
Производител : ST Microelectronics
Опаковка :
Pins : 0
Температурата : Мин 0 °C | Макс 0 °C
Размер : 92 KB
Заявление : COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112 PDF Изтегли