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SR706 Подобна

  • SR704
    • "300 Watt, silicon gate enhancement mode RF power VDMOS transistor"
  • SR704U
    • 150 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SR705
    • 200 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SR706
    • 300 Watt, silicon gate enhancement mode RF power VDMOS transistor

SR706 Datasheet и Spec

Производител : Polyfet RF 

Опаковка :  

Pins : 4 

Температурата : Мин -65 °C | Макс 150 °C

Размер : 38 KB

Заявление : 300 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SR706 PDF Изтегли