P124 спец.: 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P124 Подобна

P124
- 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P124 Datasheet и Spec

Производител : Polyfet RF

Опаковка : SO-8

Pins : 8

Температурата : Мин -65 °C | Макс 150 °C

Размер : 36 KB

Заявление : 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor