okDatasheet.com

F2248 Подобна

  • F2246
    • 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2247
    • 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2248
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2248 Datasheet и Spec

Производител : Polyfet RF 

Опаковка :  

Pins : 6 

Температурата : Мин -65 °C | Макс 150 °C

Размер : 38 KB

Заявление : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2248 PDF Изтегли