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F2001 Подобна

  • F2001
    • 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2002
    • 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2004
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2001 Datasheet и Spec

Производител : Polyfet RF 

Опаковка :  

Pins : 2 

Температурата : Мин -65 °C | Макс 150 °C

Размер : 40 KB

Заявление : 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2001 PDF Изтегли