F1535 спец.: 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1535 Подобна

F1535
- 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1535 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 4

Температурата : Мин -65 °C | Макс 150 °C

Размер : 39 KB

Заявление : 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor