F1410 спец.: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Подобна

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 6

Температурата : Мин -65 °C | Макс 150 °C

Размер : 39 KB

Заявление : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor