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F1108 Подобна

  • F1107
    • 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1108
    • 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1108
    • 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1108 Datasheet и Spec

Производител : Polyfet RF 

Опаковка :  

Pins : 4 

Температурата : Мин -65 °C | Макс 150 °C

Размер : 45 KB

Заявление : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1108 PDF Изтегли