F1081 спец.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 Подобна

F1081
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 4

Температурата : Мин -65 °C | Макс 150 °C

Размер : 43 KB

Заявление : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor