F1070 спец.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1070 Подобна

F1070
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1072
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1074
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1077
- 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1070 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 4

Температурата : Мин -65 °C | Макс 150 °C

Размер : 41 KB

Заявление : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor