F1034 спец.: 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 Подобна

F1034
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 4

Температурата : Мин -65 °C | Макс 150 °C

Размер : 34 KB

Заявление : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor