F1018 спец.: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1018 Подобна

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1018 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 8

Температурата : Мин -65 °C | Макс 150 °C

Размер : 41 KB

Заявление : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor