F1001C спец.: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001C Подобна

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001C Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 6

Температурата : Мин -65 °C | Макс 150 °C

Размер : 36 KB

Заявление : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor