PHX2N50E Подобна

  • PHX23NQ10T
    • 100 V, N-channel trenchMOS transistor
  • PHX2N40E
    • 400 V, power MOS transistor isolated version of PHP4N40E
  • PHX2N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX2N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX2N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • PowerMOS transistor. Avalanche energy rated.

PHX2N50E Datasheet и Spec

Производител : Philips 

Опаковка : SOT186A 

Pins : 3 

Температурата : Мин -55 °C | Макс 150 °C

Размер : 85 KB

Заявление : PowerMOS transistor. Avalanche energy rated. 

PHX2N50E PDF Изтегли