Path:OKDatasheet > Полупроводникови Datasheet > Philips Datasheet > PHX10N40E
PHX10N40E спец.: PowerMOS transistor. Avalanche energy rated.
PHX10N40E Подобна
- PHX10N40E
- PowerMOS transistor. Avalanche energy rated.
- PHX10N40E
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- 200 V, N-channel trenchMOS transistor
- PHX15N06E
- 60 V, power MOS transistor
- PHX1N40
- 400 V, power MOS transistor
- PHX1N40E
- 400 V, power MOS transistor
- PHX1N60E
- 600 V, power MOS transistor isolated version of PHP1N60E
PHX10N40E Datasheet и Spec
Производител : Philips
Опаковка : SOT186A
Pins : 3
Температурата : Мин -55 °C | Макс 150 °C
Размер : 82 KB
Заявление : PowerMOS transistor. Avalanche energy rated.
PHX10N40E PDF Изтегли