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PHW8ND50E спец.: 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E Подобна
- PHW80NQ10T
- 100 V, N-channel trenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW8N50E
- PowerMOS transistor. Avalanche energy rated.
- PHW8N50E
- PowerMOS transistor. Avalanche energy rated.
- PHW8N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW8ND50E
- 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E Datasheet и Spec
Производител : Philips
Опаковка : SOT
Pins : 3
Температурата : Мин -55 °C | Макс 150 °C
Размер : 80 KB
Заявление : 500 V, power MOS transistor FREDFET, avalanche energy rated
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