Path:OKDatasheet > Полупроводникови Datasheet > Philips Datasheet > PHB112N06T
PHB112N06T спец.: 55 V, N-channel enhancement mode field-effect transistor
PHB112N06T Подобна
- PHB100N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB10N40
- PowerMOS transistor.
- PHB10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHB112N06T
- 55 V, N-channel enhancement mode field-effect transistor
- PHB11N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHB11N03LT
- 30 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- TrenchMOS transistor. Logic level FET.
PHB112N06T Datasheet и Spec
Производител : Philips
Опаковка : SOT
Pins : 3
Температурата : Мин -55 °C | Макс 175 °C
Размер : 288 KB
Заявление : 55 V, N-channel enhancement mode field-effect transistor
PHB112N06T PDF Изтегли