Path:OKDatasheet > Полупроводникови Datasheet > Philips Datasheet > PHB11N50E
PHB11N50E спец.: PowerMOS transistor. Avalancne energy rated.
PHB11N50E Подобна
- PHB100N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB10N40
- PowerMOS transistor.
- PHB10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHB112N06T
- 55 V, N-channel enhancement mode field-effect transistor
- PHB11N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHB11N03LT
- 30 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- TrenchMOS transistor. Logic level FET.
PHB11N50E Datasheet и Spec
Производител : Philips
Опаковка : SOT404
Pins : 3
Температурата : Мин -55 °C | Макс 150 °C
Размер : 45 KB
Заявление : PowerMOS transistor. Avalancne energy rated.
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