MGY25N120D спец.: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGY25N120D Подобна

MGY20N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
MGY25N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGY25N120D Datasheet и Spec

Производител : ON Semiconductor

Опаковка : TO-3PBL

Pins : 3

Температурата : Мин 0 °C | Макс 0 °C

Размер : 188 KB

Заявление : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel