MGW21N60ED спец.: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGW21N60ED Подобна

MGW20N120
- Insulated Gate Bipolar Transistor N-Channel
MGW21N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGW21N60ED Datasheet и Spec

Производител : ON Semiconductor

Опаковка : TO-247

Pins : 3

Температурата : Мин 0 °C | Макс 0 °C

Размер : 167 KB

Заявление : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel