MGP4N60ED спец.: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGP4N60ED Подобна

MGP4N60E
- Insulated Gate Bipolar Transistor N-Channel
MGP4N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGP4N60ED Datasheet и Spec

Производител : ON Semiconductor

Опаковка : TO-220

Pins : 3

Температурата : Мин 0 °C | Макс 0 °C

Размер : 160 KB

Заявление : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel