NTE6093 спец.: Silicon dual schottky barrier rectifier. Max peak repetitive reverse voltage 60V. Average rectified forward current(per diode) 30A.

NTE6093 Подобна

NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.

NTE6093 Datasheet и Spec

Производител : NTE Electronic

Опаковка : TO3P

Pins : 3

Температурата : Мин -65 °C | Макс 125 °C

Размер : 19 KB

Заявление : Silicon dual schottky barrier rectifier. Max peak repetitive reverse voltage 60V. Average rectified forward current(per diode) 30A.