Path:OKDatasheet > Полупроводникови Datasheet > NTE Electronic Datasheet > NTE3312
NTE3312 спец.: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Path:OKDatasheet > Полупроводникови Datasheet > NTE Electronic Datasheet > NTE3312
NTE3312 спец.: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Производител : NTE Electronic
Опаковка :
Pins : 3
Температурата : Мин 0 °C | Макс 150 °C
Размер : 19 KB
Заявление : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.