MTW32N20E Подобна

  • MTW32N20E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW32N25E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW32N25E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW33N10E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW35N15E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW32N20E Datasheet и Spec

Производител : Motorola 

Опаковка : TO-247AE 

Pins : 4 

Температурата : Мин -55 °C | Макс 150 °C

Размер : 225 KB

Заявление : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole 

MTW32N20E PDF Изтегли