MTW26N15E спец.: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW26N15E Подобна

MTW20N50E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW23N25E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW24N40E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW26N15E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW26N15E Datasheet и Spec

Производител : Motorola

Опаковка : TO-247AE

Pins : 4

Температурата : Мин -55 °C | Макс 150 °C

Размер : 175 KB

Заявление : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole