MTW10N100E спец.: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW10N100E Подобна

MTW10N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW14N50E
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MTW16N40E
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MTW10N100E Datasheet и Spec

Производител : Motorola

Опаковка : TO-247AE

Pins : 4

Температурата : Мин -55 °C | Макс 150 °C

Размер : 211 KB

Заявление : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole