Path:OKDatasheet > Полупроводникови Datasheet > Motorola Datasheet > MTD1P50E
MTD1P50E спец.: TMOS E-FET high energy power FET D2PAK for surface mount
MTD1P50E Подобна
- MTD1302
- HDTMOS E-FET high dansity power FET D2PAK for surface mount
- MTD15N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD15N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD1N50E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N60E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1P50E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTD1P50E Datasheet и Spec
Производител : Motorola
Опаковка : DPAK
Pins : 4
Температурата : Мин -55 °C | Макс 150 °C
Размер : 101 KB
Заявление : TMOS E-FET high energy power FET D2PAK for surface mount
MTD1P50E PDF Изтегли