Path:OKDatasheet > Полупроводникови Datasheet > Motorola Datasheet > MTB55N06Z
MTB55N06Z спец.: TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z Подобна
- MTB50N06EL
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB55N06Z
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z Datasheet и Spec
Производител : Motorola
Опаковка : DPAK
Pins : 4
Температурата : Мин -55 °C | Макс 150 °C
Размер : 160 KB
Заявление : TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z PDF Изтегли