Path:OKDatasheet > Полупроводникови Datasheet > Micro Electronics Datasheet > BD242B
BD242B спец.: 4mW NPN silicon epitaxial base power transistor
BD242B Подобна
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD242B Datasheet и Spec
Производител : Micro Electronics
Опаковка : TO-220B
Pins : 3
Температурата : Мин -55 °C | Макс 150 °C
Размер : 107 KB
Заявление : 4mW NPN silicon epitaxial base power transistor
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