BUZ900X4S спец.: N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ900X4S Подобна

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- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ900X4S Datasheet и Spec

Производител : Magnatec

Опаковка : SOT227

Pins : 4

Температурата : Мин 0 °C | Макс 150 °C

Размер : 36 KB

Заявление : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.