Path:okDatasheet > Полупроводникови Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-19

DE-10D121K 20KW48 P4KE120A 3T064B 20KW216 P4KE6.8A MDE-10D680K P4KE43A MDE-25D821K SMLJ8.0A SMLJ18A MDE-10D621K MDE-32D911K 1N6388 SMAJ8.0A P6KE15A MAX-370 5KP130A P4KE400 SMBJ85 SMLJ170 SMBJ51 SMLJ7.5A SMBJ33 SMAJ9.0 3KP28 SMLJ75A SMCJ26

MDE Semiconductor Схеми каталог-19

Част НеПроизводителЗаявление
MDE-25D511K MDE Semiconductor510V; max peak current20000A; metal oxide varistor. Standard D series 25mm disc
SMDJ58 MDE Semiconductor58.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-10D121K MDE Semiconductor120V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc
20KW48 MDE Semiconductor48.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
P4KE120A MDE Semiconductor102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
3T064B MDE Semiconductor58V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor
20KW216 MDE Semiconductor216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
P4KE6.8A MDE Semiconductor5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-10D680K MDE Semiconductor68V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc
P4KE43A MDE Semiconductor36.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-25D821K MDE Semiconductor820V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc
SMLJ8.0A MDE Semiconductor8.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMLJ18A MDE Semiconductor18.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-10D621K MDE Semiconductor620V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc
MDE-32D911K MDE Semiconductor910V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc
1N6388 MDE Semiconductor36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SMAJ8.0A MDE Semiconductor8.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P6KE15A MDE Semiconductor10.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MAX-370 MDE Semiconductor333V; 20A ;288KW peak pulse power; high current transient voltage suppressor
5KP130A MDE Semiconductor130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
P4KE400 MDE Semiconductor324.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ85 MDE Semiconductor85.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMLJ170 MDE Semiconductor170.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMBJ51 MDE Semiconductor51.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMLJ7.5A MDE Semiconductor7.50V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMBJ33 MDE Semiconductor33.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMAJ9.0 MDE Semiconductor9.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
3KP28 MDE Semiconductor28.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMLJ75A MDE Semiconductor75.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMCJ26 MDE Semiconductor26.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications

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