Path:okDatasheet > Полупроводникови Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-12
E110 SMCJ8.0 1.5KE13 SMAJ8.0 SA15A 3KP18A SMBJ7.5A 5KP6.0 MDE-25S561K SMCJ20A 1.5KE6.8.0A SMDJ5.0A SAC6.0 LCE11 15KW58 MDE-53D621K 5KP43A MDE-25D951K 3KP18 SMAJ90 20KW80A MAX40-8.0C SMDJ10A SMAJ15A 3KP15 P6KE160 MDE-10D220M 20KW40A
Част Не | Производител | Заявление |
---|---|---|
SMDJ6.5 | MDE Semiconductor | 6.50V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMDJ7.0A | MDE Semiconductor | 7.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
P4KE110 | MDE Semiconductor | 89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SMCJ8.0 | MDE Semiconductor | 8.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
1.5KE13 | MDE Semiconductor | 10.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
SMAJ8.0 | MDE Semiconductor | 8.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SA15A | MDE Semiconductor | 15.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
3KP18A | MDE Semiconductor | 18.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMBJ7.5A | MDE Semiconductor | 7.50V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
5KP6.0 | MDE Semiconductor | 6.00V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE-25S561K | MDE Semiconductor | 560V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
SMCJ20A | MDE Semiconductor | 20.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
1.5KE6.8.0A | MDE Semiconductor | 5.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
SMDJ5.0A | MDE Semiconductor | 5.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SAC6.0 | MDE Semiconductor | 6.00V; 41.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
LCE11 | MDE Semiconductor | 11.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
15KW58 | MDE Semiconductor | 58.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE-53D621K | MDE Semiconductor | 620V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
5KP43A | MDE Semiconductor | 43.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE-25D951K | MDE Semiconductor | 950V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
3KP18 | MDE Semiconductor | 18.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMAJ90 | MDE Semiconductor | 90.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
20KW80A | MDE Semiconductor | 80.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MAX40-8.0C | MDE Semiconductor | 8.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
SMDJ10A | MDE Semiconductor | 10.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMAJ15A | MDE Semiconductor | 15.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
3KP15 | MDE Semiconductor | 15.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
P6KE160 | MDE Semiconductor | 130.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-10D220M | MDE Semiconductor | 22V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |
20KW40A | MDE Semiconductor | 40.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |