Path:OKDatasheet > Полупроводникови Datasheet > IR Datasheet > IRFS59N10D
IRFS59N10D спец.: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D Подобна
- IRFS17N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFS33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
- IRFS38N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.054 Ohm, ID = 44A
- IRFS4710
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.014 Ohm, ID = 75A
- IRFS59N10D
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D Datasheet и Spec
Производител : IR
Опаковка : DDPak
Pins : 3
Температурата : Мин -55 °C | Макс 175 °C
Размер : 151 KB
Заявление : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D PDF Изтегли