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IRFB9N30A спец.: HEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3A
IRFB9N30A Подобна
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IRFB9N30A Datasheet и Spec
Производител : IR
Опаковка :
Pins : 3
Температурата : Мин -55 °C | Макс 150 °C
Размер : 150 KB
Заявление : HEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3A
IRFB9N30A PDF Изтегли