IRF9Z24NS спец.: HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A

IRF9Z24NS Подобна

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- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
IRF9140
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IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9Z24NS Datasheet и Spec

Производител : IR

Опаковка : DDPak

Pins : 3

Температурата : Мин -55 °C | Макс 175 °C

Размер : 184 KB

Заявление : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A