Path:okDatasheet > Полупроводникови Datasheet > IR Datasheet > IR-33

0P5 ST2100C30R2L SD300R20MBC ST180C12C1 SD200N24MC SD103R25S15MBC ST180S04P2 IRFN140 ST280CH04C2L SD203N10S15PC 300UR5A ST330C14C0L SD203N10S20PC 305U200P3 JANTXV2N6845 47LR100 PVA3324 ST330C04L2L IRF721 ST183S04PFN2 PVN012 SD153R12S10PBV SD103R12S20PSC IRG4PC30KD 301UA250P5 IRU1

IR Схеми каталог-33

Част НеПроизводителЗаявление
ST280S06M0V IRPhase control thyristor
303URA250P5 IRStandard recovery diode
ST2100C30R2L IRPhase control thyristor
SD300R20MBC IRStandard recovery diode
ST180C12C1 IRPhase control thyristor
SD200N24MC IRStandard recovery diode
SD103R25S15MBC IRFast recovery diode
ST180S04P2 IRPhase control thyristor
IRFN140 IRHEXFET power mosfet
ST280CH04C2L IRPhase control thyristor
SD203N10S15PC IRFast recovery diode
300UR5A IRStandard recovery diode
ST330C14C0L IRPhase control thyristor
SD203N10S20PC IRFast recovery diode
305U200P3 IRStandard recovery diode
JANTXV2N6845 IRHEXFET power mosfet
47LR100 IRStandard recovery diode
PVA3324 IRBOSFET photovoltaic relay
ST330C04L2L IRPhase control thyristor
IRF721 IRN-channel HEXFET, 350V, 3.3A
ST183S04PFN2 IRInverter grade thyristor
PVN012 IRHEXFET power MOSFET photovoltaic relay
SD153R12S10PBV IRFast recovery diode
SD103R12S20PSC IRFast recovery diode
IRG4PC30KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
301UA250P5 IRStandard recovery diode
IRU1117-25CS IR800mA low dropout positive fixed 2.5V regulator
ST700C18L0 IRPhase control thyristor
IRF3711L IRHEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A
ST300C12C0L IRPhase control thyristor

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