| Част Не | Производител | Заявление |
|---|
| IRFPC40 | IR | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 1.2 Ohm, ID = 6.8 A |
| ST2100C34R1 | IR | Phase control thyristor |
| IRU1050CD | IR | 5A low dropout positive adjustable regulator |
| ST230C14C0 | IR | Phase control thyristor |
| ST303C12CHK3 | IR | Inverter grade thyristor |
| SD110OC12L | IR | Standard recovery diode |
| ST303S04PFN1 | IR | Inverter grade thyristor |
| IRFPC60 | IR | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 0.40 Ohm, ID = 16 A |
| SD263C30S50L | IR | Fast recovery diode |
| ST223S08MFN2L | IR | Inverter grade thyristor |
| IRF540NS | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33A |
| SD500N36PTC | IR | Standard recovery diode |
| JANTXV2N6758 | IR | HEXFET power mosfet |
| SD203R08S15PBC | IR | Fast recovery diode |
| 307U120P4 | IR | Standard recovery diode |
| 305U80 | IR | Standard recovery diode |
| IRF1407S | IR | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. |
| 300UFR160YPD | IR | Standard recovery diode |
| IRG4BC10KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A |
| ST173S12MFK2L | IR | Inverter grade thyristor |
| ST330S14P3L | IR | Phase control thyristor |
| SD853C36S50K | IR | Fast recovery diode |
| SD80OC40L | IR | Standard recovery diode |
| ST103S08PFN0 | IR | Phase control thyristor |
| ST1230C08K1 | IR | Phase control thyristor |
| ST173C12CHK2L | IR | Inverter grade thyristor |
| IRF840AS | IR | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A |
| SD300R08PBC | IR | Standard recovery diode |
| IRG4BC20U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A |
| 309U200P3 | IR | Standard recovery diode |
