| Част Не | Производител | Заявление |
|---|
| SD500N36MTC | IR | Standard recovery diode |
| IRF7707 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -4.5V. RDS(on) = 33mOhm, ID = -6.0A @ VGS = -2.5V. |
| IRGBC30K | IR | Insulated gate bipolar transistor |
| ST1900C48R1L | IR | Phase control thyristor |
| IRF644 | IR | Power MOSFET, 250V, 14A |
| ST2100C38R0 | IR | Phase control thyristor |
| 300U60A | IR | Standard recovery diode |
| IRLR120N | IR | N-channel power MOSFET, 100V, 10A |
| ST180S16M0L | IR | Phase control thyristor |
| 305URA200P5 | IR | Standard recovery diode |
| ST183C08CHK2L | IR | Inverter grade thyristor |
| IRFU2405 | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.016 Ohm, ID = 56A |
| SD1553C18S20K | IR | Fast recovery diode |
| ST180C08C3L | IR | Phase control thyristor |
| ST223S08MFN2 | IR | Inverter grade thyristor |
| ST230S04M1L | IR | Phase control thyristor |
| IRF5Y1310CM | IR | HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A |
| ST333C08LHK3L | IR | Inverter grade thyristor |
| IR6226 | IR | Intelligent high side mosfet power switch |
| JANTX2N6760 | IR | HEXFET power mosfet |
| SD600R12MC | IR | Standard recovery diode |
| ST333C08CHK0 | IR | Inverter grade thyristor |
| ST183C08CHK3 | IR | Inverter grade thyristor |
| SD103R08S20MBC | IR | Fast recovery diode |
| 200HF120PBV | IR | Standard recovery diode |
| IRGPH20S | IR | Insulated gate bipolar transistor |
| SD300N28PBC | IR | Standard recovery diode |
| 300UR160APD | IR | Standard recovery diode |
| 303U250P3 | IR | Standard recovery diode |
| 301UA200P4 | IR | Standard recovery diode |
