Path:okDatasheet > Полупроводникови Datasheet > IR Datasheet > IR-143
R2L ST223C08CHK0L CPU165MF ST280S04P1VL IRFZ44Z SD150OC30L 305UR250P2 SD150R20PBC SD500N30PTC SD400N08PSC 300HF40MS 301URA200P2 ST230S16M1 SD103R04S20MC 301U120P5 JANTX2N6786 ST230C14C2L JANTXV2N6804 SD153R12S15PSV ST300C20L0 IRF820 301U80P4 IRG4PC30 302UFR120PD IRHN9150 IRKH4301
Част Не | Производител | Заявление |
---|---|---|
303UA120P5 | IR | Standard recovery diode |
ST3230C12R2L | IR | Phase control thyristor |
ST223C08CHK0L | IR | Inverter grade thyristor |
CPU165MF | IR | IGBT SIP module |
ST280S04P1VL | IR | Phase control thyristor |
IRFZ44Z | IR | N-channel power MOSFET for fast switching applications, 55V, 51A |
SD150OC30L | IR | Standard recovery diode |
305UR250P2 | IR | Standard recovery diode |
SD150R20PBC | IR | Standard recovery diode |
SD500N30PTC | IR | Standard recovery diode |
SD400N08PSC | IR | Standard recovery diode |
300HF40MS | IR | Standard recovery diode |
301URA200P2 | IR | Standard recovery diode |
ST230S16M1 | IR | Phase control thyristor |
SD103R04S20MC | IR | Fast recovery diode |
301U120P5 | IR | Standard recovery diode |
JANTX2N6786 | IR | HEXFET power mosfet |
ST230C14C2L | IR | Phase control thyristor |
JANTXV2N6804 | IR | HEXFET power mosfet |
SD153R12S15PSV | IR | Fast recovery diode |
ST300C20L0 | IR | Phase control thyristor |
IRF820 | IR | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A |
301U80P4 | IR | Standard recovery diode |
IRG4PC30 | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A |
302UFR120PD | IR | Standard recovery diode |
IRHN9150 | IR | HEXFET transistor |
IRKH43018 | IR | Thyristor/diode and thyristor/thyristor |
305UR120P5 | IR | Standard recovery diode |
IRFU5505 | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.11 Ohm, ID = -18A |
307UR120P2 | IR | Standard recovery diode |