| Част Не | Производител | Заявление |
|---|
| IRFP17N50LS | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.28 Ohm, ID = 16A, Trr = 170ns. |
| 200HFR40MV | IR | Standard recovery diode |
| IRG4BC30K | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A |
| SD203N12S20PC | IR | Fast recovery diode |
| ST333C04LHK1 | IR | Inverter grade thyristor |
| SD203N25S15MSC | IR | Fast recovery diode |
| 200HF40MV | IR | Standard recovery diode |
| SD103N08S15PBC | IR | Fast recovery diode |
| ST700C18L1L | IR | Phase control thyristor |
| ST1900C50R3 | IR | Phase control thyristor |
| ST230S16M1L | IR | Phase control thyristor |
| SD203R10S10PSC | IR | Fast recovery diode |
| SD600R08MC | IR | Standard recovery diode |
| IRF634N | IR | Power MOSFET, 250V, 8A |
| IRF3704L | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0 mOhm, ID = 77A |
| SD300R20PSC | IR | Standard recovery diode |
| ST303C08CHK2 | IR | Inverter grade thyristor |
| SD203R12S10MC | IR | Fast recovery diode |
| SD400R12PSC | IR | Standard recovery diode |
| SD400R20MC | IR | Standard recovery diode |
| SD253R16S20MBV | IR | Fast recovery diode |
| IRFR3707 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 13mOhm, ID = 61A |
| IRF3708L | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62A |
| ST300C12C0 | IR | Phase control thyristor |
| ST173C10CHK3 | IR | Inverter grade thyristor |
| IRF840LCS | IR | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A |
| SD153R12S10MSV | IR | Fast recovery diode |
| SD453N12S30MC | IR | Fast recovery diode |
| ST110S14P1 | IR | Phase control thyristor |
| IRG4RC10U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A |
