Path:OKDatasheet > Полупроводникови Datasheet > GSI Datasheet > GS832018T-166
GS832018T-166 спец.: 166MHz 8.5ns 2M x 18 36Mb synchronous burst SRAM
GS832018T-166 Подобна
- GS832218B-250
- 250MHz 6ns 2M x 18 36Mb DCD pipelined/flow through SRAM
- GS832418B-133I
- 133MHz 11ns 2M x 18 36Mb S/DCD sync burst SRAM
- GS8324Z18B-166I
- 166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
- GS8324Z18C-166I
- 166MHz 7ns 2M x 18 36Mb sync NBT SRAM
- GS832418B-166
- 166MHz 8.5ns 2M x 18 36Mb S/DCD sync burst SRAM
- GS8324Z18B-166
- 166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
- GS8322Z18B-166I
- 166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
- GS8322Z18B-200
- 200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
GS832018T-166 Datasheet и Spec
Производител : GSI
Опаковка : TQFP
Pins : 100
Температурата : Мин 0 °C | Макс 70 °C
Размер : 880 KB
Заявление : 166MHz 8.5ns 2M x 18 36Mb synchronous burst SRAM
GS832018T-166 PDF Изтегли