Path:OKDatasheet > Полупроводникови Datasheet > Cree Datasheet > W4TXE0X-0D00
W4TXE0X-0D00 спец.: Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Производител : Cree
Опаковка :
Pins : 0
Температурата : Мин 0 °C | Макс 0 °C
Размер : 306 KB
Заявление : Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition