| Част Не | Производител | Заявление |
|---|
| CSD10060B | Cree | 600V; 10A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| W4NXD8C-S000 | Cree | "Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition" |
| C470-XB900-B | Cree | 150mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| W6NXD3K-0000 | Cree | "Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition" |
| C460-CB290-E1000 | Cree | 3.0mW; colordeep blue; 3.3-3.7V; super bright InGaN LED |
| W4NXD8D-0000 | Cree | Diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C405-XB900-B | Cree | 250mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| C450-CB290-E1000 | Cree | 3.5mW; colordeep blue; 3.3-3.7V; super bright InGaN LED |
| W4SRD0R-0D00 | Cree | Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W4NXD8C-L000 | Cree | Diameter 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C460-CB230-E1000 | Cree | 1.3W; colordeep blue; 3.7V; low current InGaN LED |
| W6PXD3O-0000 | Cree | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C405-XB290-E400-A | Cree | 17.0mW; colorUV; 3.7-4.0V; Xbright InGaN LED |
| W4SRD8R-0D00 | Cree | Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C470-UB290-E1000 | Cree | 5.0mW; colorblue; 3.5-3.9V; ultra bright InGaN LED |
| CSD10060A | Cree | 600V; 10A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| CXXX-MB290-E400 | Cree | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
| W6NRD0X-0000 | Cree | Diameter 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CRF-22010-101 | Cree | 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
| CSD10060G | Cree | 600V; 10A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| W4NXD8C-0000 | Cree | Diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CSD04060A | Cree | 600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| CXXX-CB230-E1000 | Cree | 5V; 125mA; super bright LED. For communication handsets, backlighting, high resolution video displays |
| C470-CB290-E1000 | Cree | 2.5mW; colorblue; 3.3-3.7V; super bright InGaN LED |
| C525-CB290-E1000 | Cree | 1.5mW; colorgreen; 3.3-3.7V; super bright InGaN LED |
| C430-UB290-E1000 | Cree | 2.0mW; 30mA; super bright LED for full color displays & moving message signs |
| C525-UB290-E1000 | Cree | 3.0mW; colorgreen; 3.5-3.9V; ultra bright InGaN LED |
| C505-XB290-E1000-B | Cree | 11.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED |
| W4NXE4C-0D00 | Cree | Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CSD05120A | Cree | 1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, high voltage multipliers |
