Path:OKDatasheet > Полупроводникови Datasheet > Cree Datasheet > CRF-22010-101
CRF-22010-101 спец.: 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
CRF-22010-101 Подобна
- CRF-22010-001
- 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
- CRF-22010-101
- 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
- CRF-22010-TB
- 50VDC ;66W; evaluation board for CRF-22010 version A (narrowband)
- CRF-22010-TB
- 50VDC ;66W; evaluation board for CRF-22010 version A (narrowband)
CRF-22010-101 Datasheet и Spec
Производител : Cree
Опаковка :
Pins : 2
Температурата : Мин -30 °C | Макс 120 °C
Размер : 157 KB
Заявление : 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
CRF-22010-101 PDF Изтегли