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Path:OKDatasheet > Полупроводникови Datasheet > THAT Corporation Datasheet
Ключова дума: THAT Corporation Datasheet, THAT Corporation Данните на листа, THAT Corporation Схеми, THAT Corporation
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THAT Corporation официалния уебсайт
Част Не | Заявление |
---|---|
THAT2252 | IC RMS-level detector |
THAT1512 | Low noise, high performance microphone preamplifier IC |
THAT1206 | Quad low-noise NPN transistor array |
THAT1203 | Quad low-noise NPN transistor array |
THAT1512 | Low noise, high performance microphone preamplifier IC |
THAT1510 | Low noise, high performance microphone preamplifier IC |
THAT2181C | Pre-trimmed IC voltage controlled amplifier |
THAT100 | Quad low-noise NPN transistor array |
THAT4301P | IC dynamic processor |
THAT2180B | Pre-trimmed IC voltage controlled amplifier |
THAT2180A | Pre-trimmed IC voltage controlled amplifier |
THAT300P | Low-noise matched transistor array IC |
THAT320P | Low-noise matched transistor array IC |
THAT1246 | Quad low-noise PNPN transistor array |
THAT1420 | Balanced line driver |
THAT1200 | Quad low-noise NPN transistor array |
THAT120 | Quad low-noise PNPN transistor array |
THAT1243 | Quad low-noise PNPN transistor array |
THAT300S | Low-noise matched transistor array IC |
THAT4301S | IC dynamic processor |
THAT1246 | Quad low-noise PNPN transistor array |
THAT1440 | Balanced line driver |
THAT4311 | IC dynamic processor |
THAT1510 | Low noise, high performance microphone preamplifier IC |
THAT1240 | Quad low-noise PNPN transistor array |
THAT1206 | Quad low-noise NPN transistor array |
THAT2181A | Pre-trimmed IC voltage controlled amplifier |
THAT140 | Quad low-noise NPN/PNP transistor array |
THAT Corporation is a provider of high-performance audio integrated circuits to manufacturers of professional and industrial products. THAT Corporation is concentrating its current design efforts specifically on analog audio input and output ICs. These components are designed to be manufactured using "dielectric isolation" (DI) fabrication, an advanced process technology that provides higher device-to-device breakdown voltages, better isolation between individual transistors, and faster speeds.
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