Path:OKDatasheet > Полупроводникови Datasheet > Polyfet RF Datasheet > P122
P122 спец.: "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"
Path:OKDatasheet > Полупроводникови Datasheet > Polyfet RF Datasheet > P122
P122 спец.: "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"
Производител : Polyfet RF
Опаковка : SO
Pins : 6
Температурата : Мин -65 °C | Макс 150 °C
Размер : 47 KB
Заявление : "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"