BUK555-200B спец.: PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.

BUK555-200B Подобна

BUK542-100A
- 100 V, power MOS transistor
BUK542-100A
- 100 V, power MOS transistor
BUK542-100B
- 100 V, power MOS transistor
BUK542-60A
- 60 V, power MOS transistor
BUK542-60B
- 60 V, power MOS transistor
BUK542-60B
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BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
BUK543-100A
- 100 V, power MOS transistor

BUK555-200B Datasheet и Spec

Производител : Philips

Опаковка : TO220AB

Pins : 3

Температурата : Мин 0 °C | Макс 175 °C

Размер : 76 KB

Заявление : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.