Path:okDatasheet > Полупроводникови Datasheet > PanJit Datasheet > PanJit-50
CJ43CA SS19 1SMB3EZ200 P6KE160A P4KE27 BAT54A 1.5SMCJ14CA SB1060CT 2EZ47 1A4 FL406 SB1040 P6KE15CA P6SMBJ7.0 CP301 PS204 P4SMAJ14C 1.5SMCJ12 SB840DC BZT52-C18 1.5SMCJ43A PG304R SD380T SD520S BZX84C2V7W P4KE9.1CA 3KP24 SK32
Част Не | Производител | Заявление |
---|---|---|
P4KE43A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 36.80V, Vbr(min/max) = 40.90/45.20V, It = 1mA. |
P6KE47 | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 38.10V, Vbr(min/max) = 42.30/51.70V, It = 1 mA. |
3.0SMCJ43CA | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 43 V. Vbr(max/min) = 47.8/54.9 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 69.4 V @ Ipp = 43.2 A. |
SS19 | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 90 V. Max average forward current 1.0 A. |
1SMB3EZ200 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 200 V. Test current Izt = 3.7 mA |
P6KE160A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 136.00V, Vbr(min/max) = 152.00/168.00V, It = 1 mA. |
P4KE27 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 21.80V, Vbr(min/max) = 24.30/29.70V, It = 1mA. |
BAT54A | PanJit | Surface mount schottky barrier diode. Max recurrent peak reverse voltage 30 V. Max average forward current 0.2 A. |
1.5SMCJ14CA | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 14V; Vbr(min/max) = 15.6/17.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 23.2V @ Ipp = 64.7A |
SB1060CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 60.0 V. Max average forward rectified current at Tc = 90degC 10 A. |
2EZ47 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 47.0 V. Test current Izt = 10.6 mA. |
1A4 | PanJit | Miniature plastic silicon rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.0 A. |
FL406 | PanJit | In-line miniature single phase silicon bridge. Max recurrent peak reverse voltage 600V. Max average rectified output current 4.0 A. |
SB1040 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 40.0 V. Max average forward rectified current at Tc = 90degC 10 A. |
P6KE15CA | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 12.80V, Vbr(min/max) = 14.30/15.80V, It = 1 mA. |
P6SMBJ7.0 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 7.0 V. Vbr(min/max) = 7.78/9.86 V. It = 10 mA. Ir = 200 uA. Vc = 13.3 V. Ipp = 45.1 A. |
CP301 | PanJit | Single-phase silicon bridge-P.C. MTG 2A, heat-sink MTG 3A . Max recurrent peak reverse voltage 100V. Max average rectified output 3.0A(at Tc=50), 2.0(at Ta=25). |
PS204 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 2.0 A. |
P4SMAJ14C | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 14 V. Breakdown voltage(min/max) 15.6/19.8 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 25.8 V. Peak pulse current 15.5 A. |
1.5SMCJ12 | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 12V; Vbr(min/max) = 13.3/16.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 22.0V @ Ipp = 68.2A |
SB840DC | PanJit | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Ta = 100degC 8 A. |
BZT52-C18 | PanJit | Surface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 18 V @ Iz = 5 mA. |
1.5SMCJ43A | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 43V; Vbr(min/max) = 47.8/54.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 69.4V, @ Ipp = 21.6A |
PG304R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 400 A. Max average forward rectified current 9.5mm lead lehgth at Ta = 55degC 3.0 A. |
SD380T | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 75degC 3 A. |
SD520S | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 5 A. |
BZX84C2V7W | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 2.7 V |
P4KE9.1CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 7.78V, Vbr(min/max) = 8.65/9.50V, It = 1 mA. |
3KP24 | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 24.00 V. Vbr = 26.70 V (min), 33.80 V (max). It = 1 mA. |
SK32 | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tl = 75degC 3.0 A. |