| Част Не | Производител | Заявление |
|---|
| 15KP58CA | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 58 V. Vbr(min/max) = 64.4/74.1 V @ It = 5.0 mA. Ir = 10 uA. Vc = 93.6 V @ Ipp = 160 A. |
| SB830DC | PanJit | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Ta = 100degC 8 A. |
| 1.5SMCJ60CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 60V; Vbr(min/max) = 66.7/76.7V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 96.8V, @ Ipp = 15.5A |
| 1.5SMCJ43CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 43V; Vbr(min/max) = 47.8/54.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 69.4V, @ Ipp = 21.6A |
| BZX84C16W | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 16 V |
| P4SMAJ33CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 33 V. Breakdown voltage(min/max) 36.7/42.2 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 53.3 V. Peak pulse current 7.5 A. |
| 1.5SMCJ8.5C | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 8.5V; Vbr(min/max) = 9.44/11.92V @ It = 1.0mA; Ir(@ Vrwm) = 20uA; Vc = 15.9V @ Ipp = 94.3A |
| 3KP45A | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 45.00 V. Vbr = 50.00 V (min), 57.50 V (max). It = 1 mA. |
| P6KE170A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 145.00V, Vbr(min/max) = 162.00/179.00V, It = 1 mA. |
| MMSZ5254BS | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 27 V @ Izt. 200 mWatts zener diode. |
| P4SMAJ200A | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 200 V. Breakdown voltage(min/max) 220/256.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 324 V. Peak pulse current 1.2 A. |
| P4KE56C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 45.60V, Vbr(min/max) = 50.40/61.60V, It = 1 mA. |
| PG102R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 200 A. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A. |
| 2EZ15 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 15.0 V. Test current Izt = 33.4 mA. |
| GBPC35005 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 35 A. |
| GBP306 | PanJit | In-line glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average rectified output current at 50degC ambient 3.0 A. |
| P4SMAJ54C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 54 V. Breakdown voltage(min/max) 60.0/76.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 96.3 V. Peak pulse current 4.2 A. |
| ER103S | PanJit | Isolation superfast recovery rectifier. Max recurrent peak reverse voltage 300V. Max average forward rectified current (9.5mm lead lehgths at Ta=55degC) 1.0A. |
| P6KE440A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 376.00V, Vbr(min/max) = 418.00/462.00V, It = 1 mA. |
| MMBZ5230B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 4.7 V @ Izt. 500 mWatts zener diode. |
| 15KP220C | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A. |
| TSP190C | PanJit | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 190V. Breakover voltage 260V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| 3.0SMCJ22A | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 22 V. Vbr(max/min) = 24.4/28.0 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 35.5 V @ Ipp = 84.4 A. |
| SA160C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 160.00V, Vbr(min/max) = 178.00/226.00V, It = 1 mA. |
| P4SMAJ190C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 190 V. Breakdown voltage(min/max) 209/267.9 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 340 V. Peak pulse current 1.2 A. |
| CP1501 | PanJit | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load at Tc=55degC 15A. |
| SB1680DC | PanJit | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 90degC 16.0 A. |
| 15KP85C | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 85 V. Vbr(min/max) = 94.4/119.2V @ It = 5.0 mA. Ir = 10 uA. Vc = 151 V @ Ipp = 99 A. |
| ER204 | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward current 2.0 A. |
| ER303 | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 300V. Max average forward current 3.0 A. |
